NXP
Semiconductors
Product speci?cation
Silicon PIN diode
BAP64-02
GRAPHICAL DATA
102handbook, halfpage
10
1
10?110?1
MGL856
1
10 102I
F
(mA)
rD
(Ω)
Fig.2 Forward resistance as a function of forward
current; typical values.
f = 100 MHz; Tj
=25°C.
handbook, halfpage500C
d
0
0204
81612
VR
(V)
200
100
400
300
(fF)
MGL857
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj
=25°C.
handbook, halfpage02
?5
0.5 31
1.5 2 2.5
f (GHz)
S21
?4
?3
?2
?1
(1)
(2)
(4)
MGL858
(dB)
(3)
Fig.4 Insertion loss (?S21?2) of the diode as a
function of frequency; typical values.
(1) IF
= 100 mA.
(2) IF
=10mA.
(3) IF
= 1 mA.
(4) IF
= 0.5 mA.
Diode inserted in series with a 50
Ω
stripline circuit
and biased via the analyzer Tee network; Tamb
=25°C.
handbook, halfpage0
?30
0.5 31
1.5 2 2.5
f (GHz)
?20
?10
MGL859
S21 2
(dB)
Fig.5 Isolation (?S21?2) of the diode as a function
of frequency; typical values.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
Tamb
=25°C.
Rev. 06 - 9 January 2008
4 of 7
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